Lecture at the Exhibitor Forum at PCIM Europe in Nuremberg, 05th June 2018 – 07th June 2018 at Thursday 07th June 2018 10:00 – 10:20 o’clock at Hall 8 Booth 507

On subject:

Latest development in Power Electronic Design: Si or SiC and GaN devices in the design of Converters incl. Safety and EMC.

Content:

The ability of wide-bandgap (WBG) devices to switch very fast, have negligible switching losses and also low on-state losses at high voltages greater than 600 V, etc, makes them near an ideal switch. While Practical Power Electronics design has never been something straightforward, realizing converters having high power densities at lowest cost, stringent EMI and safety requirements and high efficiency at both full/light load, makes their design even more challenging. Thus good design practice and in depth technical knowledge of power-electronics design, thermal design, failure modes, designing for immunity to noise, control system design, conservative PCB layout, wiring and grounding issues, etc., is the key to success in designing with SiC & GaN components.