From September 11. – 14. 2017 EPE’17 ECCE Europe Conference will take place in Warsaw, Poland.
Under the titel ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’
Mr. Supratim Basu from Bose Research Pvt. Ltd., Bangalore, India as co-author will publish a paper. First Author is Mr. Ole Christan Spro from Norwegian University of Science and Technology, Trondheim, Norway.
The lecture takes place the 12th September 2017 at 2pm in the Exhibition Hall.
Refer also to www.EEP2017.com