Entries by admineep

News from Bose Research Services in Power Electronics & eepocon – Representative of Bose Research –

In this newsletter you get interesting news and information about our latest products. Expansion of capacity In the new fiscal year, Bose Research greatly expanded capacity both in terms of space and employees.There is now more space and more places to work available, to work on the growing number of developments, simulations, analysis and tests.  Also, […]

DESIGN NEWS AC/DC Converter SafetyStandard

Today we send you our DESIGN NEWS about one of the latest development platforms of Bose Research Pv.Ltd. DESIGN NEWS AC/DC ConverterSafetyStandardUL / IEC 62368-1 certified Power600W Output100V…500VDC / 4A – 1.2A EMClevelB with15dB margin from the limits 92%efficiency  Wide rangeinput: 90 – 264VAC Temperaturerange: -20°C – +50°C Talk to us – send us your specification – without any obligation we will advise you in how […]

PCIM 2018 Pickings

The PCIM was a congress and a fair with high-class visitors and outperformed the expectations of Bose Research, who participated at the fair for the first time as an exhibitor. The visitors were interested in the developments of Bose Research. Especially the development of 1kW PFC converters with SiC semiconductors and Bose Research’s experience in […]

Seminar at SCAPE 2018 in Stockholm, Sweden from June 10th – June 12th, 2018

Seminar at SCAPE 2018 in Stockholm, Sweden from June 10th – June 12th, 2018 International Wide-Bandgap Power Electronics Application Workshop: www.ri.se/scape2018 Seminartermin: 10.Juni.2018  weiteres siehe www.ri.se/scape2018/programmme Speech by Dr. Supratim Basu, Bose Research Pv. Ltd.  und SubhatraTiwari, NTNU  am 10. Juni 2018 Topic: Part 1:  10:45 – 11:30 am Benchmarking a Si and SiC 1kW […]

Seminar at EPE 2018 Conference in Riga, Latvia from September 17th – September 21st, 2018

Seminar at EPE 2018 Conference in Riga, Latvia from September 17th – September 21st, 2018 20th European Conference on Power Electronics and Applications www.epe2018.com Seminartermin: 17. September 2018  weiteres siehe http://www.epe2018.com/tutorials Speech by Dr. Supratim Basu, Bose Research Pv. Ltd. Bangalore, India,  Prof. Tore Undeland, University of Science and Technology, Trondheim, Norway,  Prof. Jorma Kyyrä, […]

Lecture at the Exhibitor Forum at PCIM Europe in Nuremberg, 05th June 2018 – 07th June 2018 at Thursday 07th June 2018 10:00 – 10:20 o’clock at Hall 8 Booth 507

On subject: Latest development in Power Electronic Design: Si or SiC and GaN devices in the design of Converters incl. Safety and EMC. Content: The ability of wide-bandgap (WBG) devices to switch very fast, have negligible switching losses and also low on-state losses at high voltages greater than 600 V, etc, makes them near an […]

Lecture at the Industry Forum of the PCIM Europe in Nuremberg from 05.Juni 2018 – 07.Juni 2018 to: Thursday 07.06.2017, Time: 10:30 – 11:30, Location: Hall 6 Booth 155

Lecture at the Industry Forum of the PCIM Europe in Nuremberg from 05. – 07. June 2018 On the subject: Strategies for optimizing efficiency and electromagnetic compatibility (EMC) taking into account time and material effort in the development of power supplies. Content: It is important when specifying a power supply, to keep an eye on […]

PCIM Europe, Nuremberg

PCIM Europe, Nuremberg 05th – 07th June 2018 Hall 6, Booth No. 301  – 6-301 – The biggest conference and fair for Power Electronics and Power Management opens its doors again from 5th to 7th of June 2018. For the first time Bose Research Pv.Ltd. exhibits at PCIM Europe. eepocon and Bose Research show their […]

‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’

Below you will find lecture and publication on the subject ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’ from O.C. Spro, S.Basu, I. Abhuishmais, O.-M. Midtgard, T. Undeland The work examines possible design changes when using GaN components as opposed to Si components, in applications of […]