Below you will find lecture and publication on the subject ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’ from O.C. Spro, S.Basu, I. Abhuishmais, O.-M. Midtgard, T. Undeland The work examines possible design changes when using GaN components as opposed to Si components, in applications of […]
From September 11. – 14. 2017 EPE’17 ECCE Europe Conference will take place in Warsaw, Poland. Under the titel ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’ Mr. Supratim Basu from Bose Research Pvt. Ltd., Bangalore, India as co-author will publish a paper. First Author is […]
Eepocon, EEP Consulting GmbH is the new representative of Bose Research Ltd., Bangalore, India for Germany, Austria and Switzerland. Contact person is Mrs. Hildegard Stetzler-Ludwig, e-mail:. H.stetzler-ludwig@eepocon.de, Tel +49 (0) 172 8916680, +49 (0) 172 6,022,280th Hildegard Stetzler-Ludwig knows the power electronics market for many years, we are pleased to offer you an excellent solution […]
Bose Research Ltd. From Bangalore, India will be exhibiting at the Electronics & Applications in Utrecht, Netherlands from 30.05.2017 to 01.06.2017. Bose presents itself with its latest special solutions of the power electronics such as a compact 200Watt DC / DC converter, a compact 1kWatt DC / DC converter, the solution of a high-voltage converter […]
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