‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’
Below you will find lecture and publication on the subject ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’
from O.C. Spro, S.Basu, I. Abhuishmais, O.-M. Midtgard, T. Undeland
The work examines possible design changes when using GaN components as opposed to Si components, in applications of power electronics.
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