Electronica 2018 in München, vom 13. November 2018 – 16. November 2018

13. November 2018 – 16. November 2018

Messe München, Halle A5 Stand 328

Schauen Sie bei unserem Stand vorbei!

Weitere Infos finden Sie hier: www.electronica 2018

Seminar auf der SCAPE 2018 in Stockholm, Schweden vom 10. Juni 2018 – 12 Juni 2018

Seminar auf der SCAPE 2018 in Stockholm, Schweden vom 10. Juni 2018 – 12 Juni 2018

International Wide-Bandgap Power Electronics Application Workshop: www.ri.se/scape2018

Seminartermin: 10.Juni.2018 weiteres siehe www.ri.se/scape2018/programmme

Gehalten von Dr. Supratim Basu, Bose Research Pv. Ltd. und SubhatraTiwari, NTNU am 10. Juni 2018


Teil 1: 10:45 – 11:30 Uhr

Benchmarking a Si and SiC 1kW PFC Converter

  • Analysis
  • Design of a PFC based on Si MOSFET’s and on SiC MOSFET’s including SiC Schottky diodes

Teil 2: 13:00 – 13:45 Uhr

Comparing Si and SiC PFC Converter

  • Accurate measurements
  • Comparison of the design

Seminar auf der EPE 2018 Konferenz in Riga, Lettland vom 17. September 2018 – 21. September 2018

Seminar auf der EPE 2018 Konferenz in Riga, Lettland vom 17. 09.2018 – 21.09.2018

20th European Conference on Power Electronics and Applications www.epe2018.com

Seminartermin: 17. September 2018 weiteres siehe http://www.epe2018.com/tutorials

Gehalten von Dr. Supratim Basu, Bose Research Pv. Ltd. Bangalore, India, Prof. Tore Undeland, University of Science and Technology, Trondheim, Norway, Prof. Jorma Kyyrä, Alto University, Helsinki, Finland


Designing with SiC & GaN devices including Safety & EMC considerations.

Dr. Supratim Basu, Prof. Tore Undeland & Prof. Jorma Kyyrä

Seminar Presentation Time: Half day Seminar Presentation Abstract:

The ability of WBG devices to switch very fast, have negligible switching losses and also low on-state losses at high voltages greater than 600 V, etc, makes them near an ideal switch. While Practical Power Electronics design has never been something straightforward, realizing converters having high power densities at lowest cost, stringent EMI and safety requirements and high efficiency at both full/light load, makes their design even more challenging. Thus good design practice and in depth technical knowledge of power-electronics design, thermal design, failure modes, designing for immunity to noise, control system design, conservative PCB layout, wiring and grounding issues, etc., is the key to success in designing with SiC & GaN components.

This intermediate to advanced level course will begin with a refresh on SiC components followed by an in-depth treatment of various topics like switching speed considerations, EMI generation and management, PCB layout, control loop noise susceptibility, ground loops etc. Lastly the focus of this presentation is to present everything with as many practical engineering examples as possible and thus have a mix of both practice and theoretical explanations and not focus on only theory or physics.


Tutorial-Part 1

Introduction and Overview

Si and WBG-An Introduction.

● The Physics of WBG semiconductors ● Why SiC ● Why GaN ● Comparison between Si andSiC/GaN ● The SiC Diode ● Normally on and Normally off devices ● The SiC transistor ● TheSiC MOSFET ● GaN devices ● Commercial availability today.

Overview of Important Power Electronics Basics.

● Capacitors, Resistors and non-idealites ● Inductors, transformers and their saturation ●Diodes and recovery time ● Zeners, TVS and power their limitation ● SiC & GaN transistors● SiC & GaN switching speed and saturation drops ● Drivers and switching speeds for SiC & GaN ● Inductance-a bane or boon ● Parasitic oscillations ● Over current protection ●Thermal Issues ● Mounting of SiC & GaN devices ● Important safety considerations ●Generation of Noise current and return paths ● Electrostatic & Magnetic coupling ● Ground plane, grounding and high frequency current paths ● Electric & Magnetic Field Noise Emissions ● Conductors become Antennas and can both radiate and receive ● EMI considerations and energy transformation between Conducted Emissions to Radiated Emission ● Immunity.

Tutorial-Part 2

Understanding Power Electronics Design Considerations

Design considerations for Power Electronics components.

● Designing with resistors according to their inductance, voltage, power and current ratings● Designing with capacitors according to their inductance, voltage, lifetime & ripple current ratings ● Driving inductive components.

Design considerations for WBG switches.

● SiC Diode ● SiC FET ● SiC BJT ● Switching and conduction losses of SiC devices ● DrivingSiC FETS/Transistors optimally ● SiC Driver Circuits ● GaN devices ● GaN Driver Circuits ●Switching and conduction losses of GaN devices ● Driving GaN FETS optimally ● Common causes of WBG Device Failures ● Thermal Considerations ● Over temperature protection ●Over current protection of SiC switches ● Over voltage protection of SiC components ● Over current protection of GaN switches ● Over voltage protection of GaN devices

Understanding Magnetics.

● Inductance, Permeability, Core loss and saturation ● Need for flux reset ● Need for gapping magnetics ● Influence of DC bias on inductance ● Parasitic inter winding capacitance ● Leakage Inductance

Circuit design, ringing, grounding issues, etc. with SiC & GaN devices

Driver circuit design for SiC & GaN devices ● Understanding transients, circuit protection & ESD ● Circuit parasitic elements, ringing and damping with SiC & GaN devices ● Controlling switching speed of SiC & GaN devices ● Reducing circuit inductance for switching SiC & GaNdevices ● Passive & regenerative snubber circuits ● Ferrite Beads ● Kelvin connections ●Using ICs ● Generation of noise, coupling & its management ● Instabilities caused by noise.

Tutorial-Part 3

PCB & Safety Considerations, EMC Management, etc.

PCB Layout issues.

● Thermal considerations of SiC & GaN SMD power semiconductors ● Inductance considerations of SiC & GaN SMD power semiconductors ● Kelvin connections ● Shielding and noise guards for sensitive signals ● Grounding considerations and ground planes ●Understanding and placing decoupling capacitors ● Reducing heating of capacitors ● Need for multiple PTHs ● Placement of heat generating components ● Selection of components based on wave or reflow soldering ● Understanding generation of fields from PCB ●Identifying tracks with high dV/dt and high dI/dt. ● E field and B field coupling ● Shortest track length and balancing switching currents considerations ● Understanding significance of resistance, inductance, mutual capacitive coupling and mutual inductance with other PCB traces as PCB traces are not perfect equi-potential conductors ● Influence of PCB trace inductance on ringing, voltage spikes, switching loss and associated EMI. ● Managing switching speed of SiC & GaN devices ● Good converter design always has low high frequency ringing emissions without the need for a slow switching speed or significant snubber dissipation ● Internal circuit ground node is never at zero potential causing circulating ground loop currents ● Minimizing coupling of signals and fields by proper component placement ● Multi-layer PCBs.

Safety Considerations.

● Single fault considerations ● Creepage/clearence distances ● Safety Capacitors ● Residual voltages ● Insulation ● SELV ● RMS voltage considerations.

Principles of EMI management. Design of Practical Filters.

● Noise Coupling Modes and paths for SiC & GaN applications ● Electrostatic & Magnetic coupling ● Common & Differential Mode Noise ● Ground plane, grounding and high frequency current paths ● Electric & Magnetic Field Noise Emissions for SiC & GaNapplications ● Emissions from high dV/dt surfaces and remedies ● Heat-sinks and common mode currents ● Heat-sink to device capacitance, Heat-sink shields ● Influence of high speed switching of SiC & GaN components on Common Mode currents through transformer inter-winding capacitances ● Transformer Shields and Flux Straps ● dI/dt Current loops and radiated magnetic field ● Radiated Magnetic Fields from Magnetic Circuits ● Cross Talk/Near Field Interference ● How noise current flow can contribute to EMI ● Relevance of switching speed of SiC & GaN devices on EMI ● Conductors act as Antennas as they carry noise current ● Improper earthing or high earth resistance significantly increases EMI ●Safety Capacitors and Leakage currents ● A typical EMI filter and how it works ● Mitigating Radiation coupling to filters ● Shielding EMI filters and their importance ● Placement of EMI filters and influence on Board Layout .


Biography of Presenting Speakers and Authors:

Supratim Basu received the B.E. degree in electrical and electronics engineering from BIT, Mesra, India, in 1988 and the M.Tech. degree from Indian Institute of Science, Bangalore, India, in 1992 & Ph.D. degree from Chalmers University of Technology, Göteborg, Sweden in 2006.

He has published many papers, presented many lectures in many universities & industries in Europe & India and presented many Seminars in IEEE & EPE conferences on Power Electronics design. His current research interests are power electronics applications and EMI and has independently developed many converters and inverters. Presently he is managing director at Bose Research Pvt. Ltd, Bangalore, India and heads a research and development team of sixteen power electronics engineers. He also works as an independent power electronics consultant for many companies around the world.

Tore M. Undeland (M’86, SM’92, F’00) is Professor of power electronics at the Norwegian University of Science and Technology, Trondheim, Norway. He has been teaching since 1972 and as a Professor since 1984. He has authored many publications in the field of power converters, snubbers, and control in power electronics. He is a coauthor of the book Power Electronics: Converters,

Applications, and Design (New York: Wiley, 2003).
Dr. Undeland was the chairman of the European Power Electronics and Drives Association (EPE) 1997 Conference, Trondheim, and is presently member of EPE. He is a Fellow of IEEE. For six years he is a member of the AdCom, IEEE Power Electronics Society.

Prof. Jorma Kyyrä received M.Sc., Lic.Sc. and D.Sc. degrees from Helsinki University of Technology (TKK), Helsinki, Finland, in 1987, 1991, and 1995, respectively. He has worked at the university since 1985 in various positions- Associate Professor of Power Electronics since 1996, Professor of Power Electronics since 1998, Dean of the Faculty of Electronics,

Communications and Automation during 2008-2009, Vice President at Aalto during 2009-2011 and presently head of the department of electrical engineering and automation at Aalto.

His research interest is power electronics at large. Power electronics group at Aalto University has expertise e.g. in power electronics for ac drives, dc-dc converters, modeling of converters, filtering of EMI, power factor correction, distributed power systems and hybrid electric vehicles. He has been lecturing a full semester course on EMI, for many years.

Vortrag auf dem Exhibitor Forum der PCIM Europe in Nürnberg vom 05.Juni 2018 – 07.Juni 2018 am Donnerstag, den 07. Juni 2019 um 10:00 Uhr – 10:20Uhr, Halle 7 Stand 507

Zum Thema:

Aktuellste Entwicklung im Design von Leistungselektronik: Si oder SiC and GaN Bauelemente im Design von Wandlern sowie ihr Verhalten bezüglich Gerätesicherheit und Elektromagnetische Verträglichkeit.


Die Fähigkeit von Halbleitern mit breitem Bandabstand (WBG-devices) sehr schnell zu schalten, führen sowohl zu vernachlässigbaren Schaltverlusten als auch zu geringen Durchlassverlusten bei hohen Spannungen von mehr als 600 V, usw., und machen sie dadurch idealen Schaltern sehr ähnlich. Während das Design der praktischen Leistungselektronik nie einfach war, macht die Realisierung des Designs von Wandlern mit hohen Leistungsdichten bei gleichzeitig niedrigsten Kosten, strengen EMV- und Sicherheitsanforderungen und hoher Effizienz und das sowohl bei voller als auch bei geringer Last, noch wesentlich herausfordernder. Daher ist eine gute Entwurfspraxis und ein profundes technisches Wissen über Leistungselektronikdesign, thermisches Design, Fehlermodi, Design für Störfestigkeit, Steuersystemdesign, konservatives Leiterplattenlayout, Verdrahtungs- und Erdungsprobleme usw., der Schlüssel zum Erfolg beim Entwurf mit SiC- und GaN-Komponenten.