‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’

Below you will find lecture and publication on the subject ‚Driving of a GaN Enhancement Mode HEMT Transistor with Zero Diode Protection for High Efficiency and Low EMI’

from O.C. Spro, S.Basu, I. Abhuishmais, O.-M. Midtgard, T. Undeland

The work examines possible design changes when using GaN components as opposed to Si components, in applications of power electronics.

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